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威世 SI7956DP-T1-GE3 MOSFET

訂 貨 號(hào):SI7956DP-T1-GE3      品牌:威世_Vishay

庫(kù)存數(shù)量:10             品牌屬性:進(jìn)口

品牌商價(jià):¥0.00

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威世 SI7956DP-T1-GE3 MOSFET
產(chǎn)品詳細(xì)信息

Vishay SI7956DP 是雙 N 通道 MOSFET ,具有 150V 的漏極到源 (VDS) 電壓。 柵極到源電壓 (VGS) 為 20V。它采用 Power PAK SO-8 封裝。它提供漏極到源電阻 (RDS)。 10 VGS 時(shí)為 0.105 歐姆, 6 VGS 時(shí)為 0.115 歐姆。最大漏極電流 4.1A。

Trench FET 功率 MOSFET
低接通電阻,采用新的低熱阻功率 PAK 封裝
雙 MOSFET ,可節(jié)省空間
經(jīng)過(guò) 100 % Rg 測(cè)試


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