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Vishay SiR582DP-T1-RE3 MOSFET

訂 貨 號：SiR582DP-T1-RE3      品牌：威世_Vishay

庫存數(shù)量：10             品牌屬性：進口

品牌商價：￥0.00

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Vishay SiR582DP-T1-RE3 MOSFET
產(chǎn)品詳細信息

這款 Vishay TrenchFET N 溝道功率 MOSFET 的漏極電流為 116 A，用于同步整流、初級側(cè)開關、直流/直流轉(zhuǎn)換器和電機驅(qū)動開關。

極低的 RDS x Qg 品質(zhì)因數(shù)（FOM）
經(jīng)過調(diào)諧，適合最低的 RDS x Qoss FOM
100 % Rg 和 UIS 測試


屬性 數(shù)值
通道類型 N
最大連續(xù)漏極電流 116 A
最大漏源電壓 80 V
封裝類型 PowerPAK SO-8
安裝類型 表面貼裝
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