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Infineon F411MR12W2M1B76BOMA1 MOSFET

訂 貨 號：F411MR12W2M1B76BOMA1      品牌：英飛凌_Infineon

庫存數量：10             品牌屬性：進口

品牌商價：￥0.00

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Infineon F411MR12W2M1B76BOMA1 MOSFET
產品詳細信息

Infineon IGBT 模塊 FET 類型為 4 個 N 通道（半橋），可在 1200V 漏源電壓和 100A 連續漏極電流下工作。

底盤安裝
-40°C 至 150°C 工作溫度


屬性 數值
通道類型 N
最大連續漏極電流 100 A
最大漏源電壓 1200 V
封裝類型 AG-EASY1B-2
安裝類型 螺絲安裝
最大漏源電阻值 0.0113 Ω
最大柵閾值電壓 5.55V
晶體管材料 SiC
暫無

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