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onsemi AFGB40T65SQDN IGBT

訂 貨 號:AFGB40T65SQDN      品牌:安森美_Onsemi

庫存數(shù)量:10             品牌屬性:

品牌商價:¥0.00

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onsemi AFGB40T65SQDN IGBT
產(chǎn)品詳細信息

使用新型現(xiàn)場停止第 4 代 IGBT 技術(shù)。AFGB40T65 SQDN 提供最佳性能,低傳導損耗和切換損耗,可在各種應用中實現(xiàn)高效操作。

VCE ( SAT ) = 1.6 V (典型值) @IC =40 A
低 VF 軟恢復共包裝二極管
適用于汽車
低傳導損耗
低噪聲和傳導損耗
應用
汽車載板充電
用于 HEV 的汽車 DC/DC 轉(zhuǎn)換器
最終產(chǎn)品
EV/PHEV


屬性 數(shù)值
最大連續(xù)集電極電流 80 A
最大集電極-發(fā)射極電壓 650 V
最大柵極發(fā)射極電壓 ±20V
晶體管數(shù) 1
最大功率耗散 238 瓦
封裝類型 D2PAK
安裝類型 表面貼裝
通道類型 N
引腳數(shù)目 3
晶體管配置
尺寸 10.67 x 9.65 x 4.58mm
暫無

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