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威世 SIA456DJ-T1-GE3 IGBT

訂 貨 號：SIA456DJ-T1-GE3      品牌：威世_Vishay

庫存數量：10             品牌屬性：

品牌商價：￥0.00

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威世 SIA456DJ-T1-GE3 IGBT
產品詳細信息

Vishay SIA456DJ 是 N 溝道 MOSFET ，具有 200V 的漏極至源電壓 (VDS) 和 16V 的柵極至源電壓 (VGS)。它采用 POWER PAK SC-70 封裝。它在 4.5VGS 時提供 1.38ohm 的漏極到源電阻 (RDS) ，在 2.5VGS 時提供 1.5ohm 的電阻。最大漏極電流 2.6A。

Trench FET 功率 MOSFET
熱增強型 Power PAK SC-70 封裝
占地面積小


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