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Infineon IQE030N06NM5CGATMA1 MOSFET

訂 貨 號:IQE030N06NM5CGATMA1      品牌:GAT

庫存數量:10             品牌屬性:

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Infineon IQE030N06NM5CGATMA1 MOSFET
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英飛凌 PQFN 3.3x3.3 封裝的 OptiMOSTM 5 60 V 源極底置功能具有 60 V 電壓和 3.0 m Ω 的低導通電阻。它具有多種優勢,如熱能力增強、功率密度大或可改善布局。此外,高效率更、低有源冷卻要求和有效的熱管理布局都是系統級的優勢。

印刷電路板損耗降低
可實現最高功率密度和性能


屬性 數值
通道類型 N
最大連續漏極電流 137 A
最大漏源電壓 60 V
封裝類型 PQFN
安裝類型 表面貼裝
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